Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound
نویسندگان
چکیده
منابع مشابه
Electrical Properties of Plasma Deposited Thin Films
Abstract. It is well known that MIM (metal-insulator-metal) structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction). Thin films prepared using PECVD (plasma-enhanced chemical vapour deposition)exhibited Pool-Frenkel conductivity (Schottky co...
متن کاملEnhanced methanol sensing performance of oblique deposited WO3 thin films
Methanol (CH3OH) is a colorless liquid with a mild odor. The wide ranges of applications, toxicity and clinical implications of methanol have made necessary to develop reliable and high-performance methanol sensors. In this paper, WO3 thin films were deposited on SiO2/Si substrates by e-beam evaporation technique under normal and oblique angles and then post-annealed at 500 °C with a flow of ox...
متن کاملElectrical Properties of Plasma-assisted Cvd Deposited Thin Silicon Oxynitride Films
The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 C in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current–voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growin...
متن کاملPhysical Properties of Reactively Sputter-Deposited C-N Thin Films
This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2010
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.117.484